Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/47145

TitleOxygen partial pressure induced effects on the microstructure and the luminescence properties of pulsed laser deposited TiO2 thin films
Author(s)Kunti, Arup Kumar
Sekhar, K. C.
Pereira, Mário
Gomes, M. J. M.
Sharma, Shailendra Kumar
Issue date11-Jan-2017
PublisherAIP Publishing
JournalAIP Advances
Abstract(s)In this work, the influence of oxygen partial pressure on structural, morphological, and optical properties of TiO2 thin films grown on fused quartz substrate at different oxygen partial pressure by pulsed laser deposition were examined. X-Ray diffraction (XRD) patterns show the formation of TiO2 anatase phase deposited at high oxygen pressure. Atomic Force Microscopy (AFM) reveals that surface roughness of the films increases with oxygen pressure. Variation of surface morphology of films with increasing oxygen partial pressure was studied by AFM. It is observed that energy band gap of the films increases from 3.27 eV to 3.52 eV with the increase of oxygen pressure and is attributed to the decrease of oxygen defects. TiO2 thin films exhibited blue emission under the excitation of 320 nm wavelength. De-convoluted photoluminescence (PL) peaks showed that defect states are responsible for visible emission in TiO2 thin films. The intensity of PL emission associated with oxygen vacancies decreases with increasing oxygen pressure. Photometric characteristic analysis shows that the films deposited 1x10-4 mbar oxygen pressure exhibited intense blue emission with high luminescence efficacy of radiation.
TypeArticle
URIhttp://hdl.handle.net/1822/47145
DOI10.1063/1.4973721
ISSN2158-3226
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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