Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/47139

TitleEnhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
Author(s)Silva, J. P. B.
Faita, F. L.
Kamakshi, Koppole
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, Mário
Pasa, A. A.
Gomes, M. J. M.
Issue date11-Apr-2017
PublisherNature Publishing Group
JournalScientific Reports
Abstract(s)An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/ BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/ HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc=140°C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.
TypeArticle
URIhttp://hdl.handle.net/1822/47139
DOI10.1038/srep46350
ISSN2045-2322
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)


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