Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/43627
Título: | Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates |
Autor(es): | Alpuim, P. Cerqueira, M. F. Iglesias, V. Junior, George Luiz Machado Borme, J. |
Palavras-chave: | Amorphous silicon Crystallization Dopant activation, Laser scribing Piezoresistance |
Data: | 1-Fev-2016 |
Editora: | Wiley |
Revista: | physica status solidi (a) |
Citação: | Alpuim, P., Cerqueira, M. F., Iglesias, V., Machado, G., & Borme, J. (2016). Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates. Physica Status Solidi a-Applications and Materials Science, 213(7), 1717-1727. doi: 10.1002/pssa.201532980 |
Resumo(s): | The possibility of direct writing thin semiconductive channels and structures on insulating substrates in a clean room-free process is attractive for its simplicity, cost effectiveness, and possibility of a wide choice of substrates. A broad range of applications, such as large-area electronic devices (touch screens, flexible displays), sensors, or optical wave guides could benefit from such a process. In this work, we directly write on doped hydrogenated amorphous silicon (a-Si:H), with thickness in the range 10 nm–1 μm, using a Nd-YAG laser operating at 532 nm that is part of a Witec Raman confocal system. The contrast in conductivity between the exposed and unexposed areas is so high that the a-Si:H matrix needs not to be removed after exposure. B- and P-doped films were deposited on plastic, glass, and oxidized silicon wafers. The laser power threshold for crystallization was studied. The highest conductivity (886 Ω−1 cm−1) was obtained on wafer. On hard substrates, it is possible to tune the mesoscopic electrical conductivity in a very broad range of values (∼10−4–103) by design of the pattern to be transferred. Patterned films are piezoresistive with gauge factors as high as +18 and −29 for p- and n-type patterns, respectively. SEM image of laser written lines on a 10 nm thick a-Si:H film deposited on a Si/SiO2 substrate. Four regions are clearly distinguishable: the metal contact on the top area; the laser eroded area (lines); the crystallized areas adjacent to lines; the amorphous region at the bottom right. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/43627 |
DOI: | 10.1002/pssa.201532980 |
ISSN: | 1862-6319 |
Versão da editora: | http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532980/abstract |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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physica status solidi_Alpuim_et al.pdf | 1,62 MB | Adobe PDF | Ver/Abrir |