Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/43602

TitleFerroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films
Author(s)Silva, J. P. B.
Kamakshi, Koppole
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, Mário
Gomes, M. J. M.
KeywordsBaTiO3 thin films
Resistive switching
Ferroelectric properties
Oxygen vacancies
BaTiO thin films 3
Issue dateJan-2016
PublisherElsevier
JournalJournal of Physics and Chemistry of Solids
Abstract(s)In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current–voltage (I–V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P–V loops with remnant polarization (Pr) of 5.7 μC/cm2 and a coercive electric field (Ec) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.
TypeArticle
URIhttp://hdl.handle.net/1822/43602
DOI10.1016/j.jpcs.2016.01.012
ISSN0022-3697
Publisher versionwww.sciencedirect.com
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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