Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/43598
Título: | Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films |
Autor(es): | Silva, J. P. B. Kamakshi, Koppole Sekhar, K. C. Queirós, E. C. Moreira, J. Agostinho Almeida, A. Pereira, Mário Tavares, P. B. Gomes, M. J. M. |
Palavras-chave: | Resistive switching Ferroelectricity Pulsed laser deposition (0.5BZT–0.5BCT) thin film |
Data: | 2016 |
Editora: | IOP Publishing |
Revista: | Journal of Physics D: Applied Physics |
Resumo(s): | In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (0.5BZT–0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm−2 have shown optimal ferroelectric and resistive switching response, which are attributed to high tetragonality, large grain size and less defect concentration. Au/0.5BZT–0.5BCT/Pt capacitors show the electroforming free resistive switching that is explained based on the polarization modulation of the Schottky-like barrier at the 0.5BZT–0.5BCT/Au interface. The polarization induced resistive switching is evidenced by its disappearance as the temperature increases to the Curie temperature. The capacitor based on film grown at 5.5 J cm−2 shows resistive switching characterized by high switching ratio of 106 at a low set/reset voltage ≈1V, and by a stable memory window, which are highly required for memory applications. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/43598 |
DOI: | 10.1088/0022-3727/49/33/335301 |
ISSN: | 0022-3727 |
Versão da editora: | http://iopscience.iop.org |
Arbitragem científica: | yes |
Acesso: | Acesso restrito UMinho |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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Silva_2016_J._Phys._D%3A_Appl._Phys._49_335301.pdf Acesso restrito! | 1,56 MB | Adobe PDF | Ver/Abrir |