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TitleLight controlled resistive switching and photovoltaic effects in ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films
Author(s)Silva, J. P. B.
Kamakshi, Koppole
Sekhar, K. C.
Nóvoa, X. R.
Queirós, E. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, Mário
Tavares, P. B.
Gomes, M. J. M.
KeywordsLight controlled resistive switching
Photovoltaic effect
(0.5BZT-0.5BCT) thin films
Issue date2017
JournalJournal of European Ceramic Society
Abstract(s)In this work, the structural and ferroelectric properties of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films deposited at different pulse repetition rates were studied. The films deposited at pulse repetition rate of 1 Hz display the optimum values of ferroelectric polarization and dielectric permittivity and are chosen for the investigation of resistive switching and photovoltaic studies. The Pt/0.5BZT-0.5BCT/ITO capacitors show the electroforming free resistive switching (RS) and is explained based on the polarization modulation of the Schottky barrier at the 0.5BZT-0.5BCT/ITO interface. Furthermore, it is shown that the RS ratio and switching voltage can be tuned with white light illumination. The capacitors display photovoltaic effect with the open circuit voltage ≈0.8 V and the short circuit current density ≈72.6 μAcm−2. The photovoltaic efficiency is found to be ≈0.010% and is greater than that of other perovskite ferroelectric thin films. The underlying mechanism for enhanced RS and photovoltaic effects is highlighted.
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AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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