Please use this identifier to cite or link to this item:

TitleMultiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
Author(s)Amorim, B.
Ribeiro, R. M.
Peres, N. M. R.
Issue date14-Mar-2016
PublisherAmerican Physical Society
JournalPhysical Review B
CitationAmorim, B., Ribeiro, R. M., & Peres, N. M. R. (2016). Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene/h-BN/graphene structures. Physical Review B, 93(23). doi: 10.1103/PhysRevB.93.235403
Abstract(s)In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (hBN) slab and the graphene layers in the vertical current of a a graphene-hBN-graphene device. We show how for small rotational angles, the transference of momentum by the hBN crystal lattice leads to multiple peaks in the I-V curve of the device, giving origin to multiple regions displaying negative differential conductance. We also study the effect of scattering by phonons in the vertical current an see how the opening up of inelastic tunneling events allowed by spontaneous emission of optical phonons leads to sharp peaks in the second derivative of the current.
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

Files in This Item:
File Description SizeFormat 
1603.04446.pdf6,29 MBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID