Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/40574

TitleDynamic wet etching of silicon through isopropanol alcohol evaporation
Author(s)Monteiro, T. S.
Kastytis, Pamakštys
Gonçalves, L. M.
Minas, Graça
Cardoso, Susana
KeywordsIsopropanol evaporation
Isopropanol availability
Silicon wet etching
Microloading effect
Issue date2015
PublisherMDPI
JournalMicromachines
CitationMicromachines 2015, 6(10), 1534-1545; doi:10.3390/mi6101437
Abstract(s)In this paper, Isopropanol (IPA) availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH) solutions was investigated. Squares of 8 to 40 m were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy) analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing) and the angle formed towards the (100) plane.
TypeArticle
URIhttp://hdl.handle.net/1822/40574
DOI10.3390/mi6101437
ISSN2072-666X
Publisher versionhttp://www.mdpi.com/2072-666X/6/10/1437
Peer-Reviewedyes
AccessOpen access
Appears in Collections:DEI - Artigos em revistas internacionais

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