Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/39837

TitleMultifunctional Ti–Me (Me=Al, Cu) thin film systems for biomedical sensing devices
Author(s)Lopes, Cláudia Jesus Ribeiro
Vieira, M.
Borges, Joel Nuno Pinto
Fernandes, J.
Rodrigues, M. S.
Alves, E.
Barradas, N. P.
Apreutesei, M.
Steyer, P.
Tavares, C. J.
Cunha, L.
Vaz, F.
KeywordsTi-Me thin films
Intermetallic compounds
Electrical properties
Biomedical sensing devices
Issue dateDec-2015
PublisherElsevier
JournalVacuum
CitationLopes, C., Vieira, M., Borges, J., Fernandes, J., Rodrigues, M. S., Alves, E., . . . Vaz, F. (2015). Multifunctional Ti-Me (Me = Al, Cu) thin film systems for biomedical sensing devices. Vacuum, 122, 353-359. doi: 10.1016/j.vacuum.2015.05.015
Abstract(s)Ti-Me binary intermetallic thin films based on a titanium matrix doped with increasing amounts of Me (Me = Al, Cu) were prepared by magnetron sputtering (under similar conditions), aiming their application in biomedical sensing devices. The differences observed on the composition and on the micro(structural) features of the films, attributed to changes in the discharge characteristics, were correlated with the electrical properties of the intermetallic systems (Ti-Al and Ti-Cu). For the same Me exposed areas placed on the Ti target (ranging from 0.25 cm2 to 20 cm2) the Cu content increased from 3.5 at.% to 71.7 at.% in the Ti-Cu system and the Al content, in Ti-Al films, ranged from 11 to 45 at.%. The structural characterization evidenced the formation of metastable Ti-Me intermetallic phases for Al/Ti atomic ratios above 0.20 and for Cu/Ti ratios above 0.25. For lower Me concentrations, the effect of the α-Ti(Me) structure domains the overall structure. With the increase amount of the Me into Ti structure a clear trend for amorphization was observed. For both systems it was observed a significant decrease of the electrical resistivity with increasing Me/Ti atomic ratios (higher than 0.5 for Al/Ti atomic ratio and higher than 1.3 for Cu/Ti atomic ratio). Although similar trends were observed in the resistivity evolution for both systems, the Ti-Cu films presented lower resistivity values in comparison to Ti-Al system.
TypeArticle
URIhttp://hdl.handle.net/1822/39837
DOI10.1016/j.vacuum.2015.05.015
ISSN0042-207X
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0042207X15002353
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - GRF - Artigos/Papers (with refereeing)

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