Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/39781

TitleTitanium oxide adhesion layer for high temperature annealed Si/Si3N4/TiOx/Pt/LiCoO2 battery structures
Author(s)Vieira, E. M. F.
Ribeiro, J. F.
Sousa, R
Silva, Maria Manuela
Dupont, L.
Goncalves, L. M.
KeywordsLi-microbatteries
platinum
titanium oxide
adhesion layer
high temperature
TOF-SIMS
Issue date2016
PublisherIEEE
JournalJournal of Electronic Materials
CitationVieira, E. M. F., Ribeiro, J. F., Sousa, R., Silva, M. M., Dupont, L., & Goncalves, L. M. (2016). Titanium Oxide Adhesion Layer for High Temperature Annealed Si/Si3N4/TiOx/Pt/LiCoO2 Battery Structures. Journal of Electronic Materials, 45(2), 910-916. doi: 10.1007/s11664-015-4223-5
Abstract(s)This work describes the influence of a high annealing temperature of about 700C on the Si(substrate)/Si3N4/TiOx/Pt/LiCoO2 multilayer system for the fabrication of all-solid-state lithium ion thin film microbatteries. Such microbatteries typically utilize lithium cobalt oxide (LiCoO2) as cathode material with a platinum (Pt) current collector. Silicon nitride (Si3N4) is used to act as a barrier against Li diffusion into the substrate. For a good adherence between Si3N4 and Pt, commonly titanium (Ti) is used as intermediate layer. However, to achieve crystalline LiCoO2 the multilayer system has to be annealed at high temperature. This post-treatment initiates Ti diffusion into the Pt-collector and an oxidation to TiOx, leading to volume expansion and adhesion failures. To solve this adhesion problem, we introduce titanium oxide (TiOx) as an adhesion layer, avoiding the diffusion during the annealing process. LiCoO2, Pt and Si3N4 layers were deposited by magnetron sputtering and the TiOx layer by thermal oxidation of Ti layers deposited by e-beam technique. Asdeposited and annealed multilayer systems using various TiOx layer thicknesses were studied by scanning electron microscopy (SEM) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) and x-ray photoelectron spectroscopy (XPS). The results revealed that an annealing process at temperature of 700C leads to different interactions of Ti atoms between the layers, for various TiOx layer thicknesses (25–45 nm).
TypeArticle
URIhttp://hdl.handle.net/1822/39781
DOI10.1007/s11664-015-4223-5
ISSN0361-5235
1543-186X
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CAlg - Artigos em revistas internacionais/Papers in international journals
CDQuim - Artigos (Papers)
DEI - Artigos em revistas internacionais

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