Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/39409

TitleLight-controlled resistive switching in laser-assisted annealed Ba0.8Sr0.2TiO3 thin films
Author(s)Silva, J. P. B.
Kamakshi, Koppole
Sekhar, K. C.
Moreira, J. A.
Almeida, A.
Pereira, Mário
Gomes, M. J. M.
KeywordsBST thin films
Ferroelectric properties
Light-controlled resistive switching
Schottky barrier modulation
Issue date2016
PublisherWiley-VCH Verlag
Journalphysica status solidi (a)
CitationSilva, J. P. B., Kamakshi, K., Sekhar, K. C., Moreira, J. A., Almeida, A., Pereira, M., & Gomes, M. J. M. (2016). Light-controlled resistive switching in laser-assisted annealed Ba0.8Sr0.2TiO3 thin films. Physica Status Solidi a-Applications and Materials Science, 213(4), 1082-1087. doi: 10.1002/pssa.201532636
Abstract(s)In this work, Ba0.8Sr0.2TiO3 (BST)/ITO structures were grown on glass substrate and laser assisted annealing (LAA) was performed to promote the crystallization of BST. Atomic force microscopy and X-ray diffraction studies confirm the crack free and polycrystalline perovskite phase of BST. White light controlled resistive switching (RS) effect in Au/BST/ITO device is investigated. The device displays the electroforming-free bipolar RS characteristics and are explained by the modulationof the width and height of barrier at the BST/ITO interface via ferroelectric polarization. Moreover, the RS effect is signifi- cantly improved under white light illumination compared to that in the dark. The enhanced RS and photovoltaic effects are explained by considering depolarization field and charge distribution at the interface. The devices exhibit stable retention characteristics with low currents (mA), which make them attractive for non volatile memory devices.
TypeArticle
URIhttp://hdl.handle.net/1822/39409
DOI10.1002/pssa.201532636
ISSN1862-6300
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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