Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/37624

TitleRaman study of insulating and conductive ZnO: (Al, Mn) thin films
Author(s)Cerqueira, M. F.
Viseu, T. M. R.
Campos, J. Ayres de
Rolo, Anabela G.
Lacerda-Arôso, T. de
Oliveira, F.
Bogdanovic-Radovic, I.
Alves, E.
Vasilevskiy, Mikhail
KeywordsRaman scattering
ZnO thin films
Al and Mn-doping
sputtering and implantation
ion implantation
local phonon modes
Raman spectroscopy
sputtering
thin films
zinc oxide
Issue dateSep-2015
PublisherWiley-VCH Verlag
Journalphysica status solidi (a)
CitationVasilevskiy, M. I. (2015). Raman study of insulating and conductive ZnO:(Al, Mn) thin films. Physica Status Solidi (A) Applications and Materials Science, 212(10), 2345-2354. doi: 10.1002/pssa.201532162
Abstract(s)Raman spectroscopy results obtained for undoped and Al- and/or Mn-doped ZnO thin films produced by RF-sputtering are reported. The effect of the doping method (either co-sputtering or ion implantation), the dopant type and its concentration on the Raman-active vibrational modes in these films were studied in detail. The results are discussed with focus on the peak shifts and broadening, and on the doping-induced relaxation of the symmetry selection rules. A particular attention is paid to the 520-530 cm-1 Raman band observed in all Mn containing samples and a simple theoretical model and arguments are presented in support of its relation to the local (gap) phonon mode produced by Mn atoms substituting Zn in the cationic sublattice of the ZnO crystal.
TypeArticle
URIhttp://hdl.handle.net/1822/37624
DOI10.1002/pssa.201532162
ISSN1862-6319
Publisher versionhttp://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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