Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/36973

TitleDependence of Ga-doped ZnO thin film properties on different sputtering process parameters: Substrate temperature, sputtering pressure and bias voltage
Author(s)Castro, M. V.
Tavares, C. J.
KeywordsThin films
Transparent conducting oxide
Gallium-doped zinc oxide
Sputtering
Electrical properties
Pressure
Bias voltage
Substrate temperature
Issue date2015
PublisherElsevier
JournalThin Solid Films
Abstract(s)This paper reports on the effects of different sputtering deposition process parameters (substrate temperature, sputtering pressure and bias voltage) on the electrical, optical, structural and morphological properties of gallium-doped ZnO (ZnO:Ga) of ~1 μm thick. These highly transparent and conductive films were deposited on glass surfaces by d.c. pulsed magnetron sputtering from a GZO (ZnO(95.5):Ga2O3(4.5)) ceramic target in an argon atmosphere. X-ray diffraction experiments show that all films have a hexagonal wurtzite structure with the [001] preferred crystallographic direction, and themorphology of the films (obtained fromscanning electron microscope analysis) is sensitive to the process parameters. All ZnO:Ga films have an average transmittance above 80% in the visible region, and the lowest electrical resistivity of 3.03 × 10−4 Ω·cm was achieved for the sample submitted to the lowest bias voltage (−40 V), which corresponds to a carrier concentration and a carrier mobility of 6.99 × 1020 cm−3 and 29.49 cm2 V−1 s−1, respectively. A high substrate temperature, high sputtering pressure and lownegative bias voltage (within the range of studied parameters) proved to be very promising on obtaining optimized ZnO:Ga films, ensuring suitable properties for application as transparent electrodes in photovoltaic cells.
TypeArticle
URIhttp://hdl.handle.net/1822/36973
DOI10.1016/j.tsf.2015.04.036
ISSN0040-6090
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - GRF - Artigos/Papers (with refereeing)

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