Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/33981

TitleInfluence of RF-sputtering power on formation of vertically stacked Si1-xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties
Author(s)Vieira, E. M. F.
Martín-Sánchez, J.
Roldan, M. A.
Varela, M.
Buljan, M.
Bernstorff, S.
Barradas, N. P.
Franco, N.
Correia, M. R.
Rolo, Anabela G.
Pennycook, S. J.
Molina, S. I.
Alves, E.
Chahboun, Adil
Gomes, M. J. M.
Issue date2013
PublisherIpo
JournalJournal of Physics D: Applied Physics
Abstract(s)In this work, we investigate the structural and photoluminescence (PL) properties of (SiGe+Al2O3)/Al2O3 multi-layer films with layer thicknesses in the range of a few nanometres. The films were prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small SiGe nanocrystals (NCs) (∼3 to 5 nm) embedded between ultra-thin (∼6 nm thickness) Al2O3 layers. Our results show that the structural and compositional properties of the films can be tuned by changing the RF-power. It is found that nearly spherical and well confined isolated SiGe NCs (∼5 nm) are obtained for an RF-power value of 80 W. The PL properties of the films were studied and optical emission in the blue visible wavelength region was observed.
TypeArticle
URIhttp://hdl.handle.net/1822/33981
DOI10.1088/0022-3727/46/38/385301
ISSN0022-3727
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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