Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/32819

TitleInfluence of low energy argon plasma treatment on the moisture barrier performance of hot wire-CVD grown SiNx multilayers
Author(s)Majee, Subimal
Cerqueira, M. F.
Tondelier, Denis
Geffroy, Bernard
Bonnassieux, Yvan
Alpuim, P.
Bourée, Jean Eric
KeywordsSilicon nitride
Ar-plasma treatment
Permeation barrier
HW-CVD
Issue date2014
PublisherIOP Publishing
JournalJapanese Journal of Applied Physics
Abstract(s)The reliability and stability are key issues for the commercial utilization of organic photovoltaic devices based on flexible polymer substrates. To increase the shelf-lifetime of these devices, transparent moisture barriers of silicon nitride (SiNx) films are deposited at low temperature by hot wire CVD (HW-CVD) process. Instead of the conventional route based on organic/inorganic hybrid structures, this work defines a new route consisting in depositing multilayer stacks of SiNx thin films, each single layer being treated by argon plasma. The plasma treatment allows creating smoother surface and surface atom rearrangement. We define a critical thickness of the single layer film and focus our attention on the effect of increasing the number of SiNx single-layers on the barrier properties. A water vapor transmission rate (WVTR) of 2 x 10-4 g/(m2 day) is reported for SiNx multilayer stack and a physical interpretation of the plasma treatment effect is given.
TypeArticle
URIhttp://hdl.handle.net/1822/32819
DOI10.7567/JJAP.53.05FM05
ISSN1347-4065
Publisher versionhttp://dx.doi.org/10.7567/JJAP.53.05FM05
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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