Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/32811

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dc.contributor.authorMajee, S.por
dc.contributor.authorCerqueira, M. F.por
dc.contributor.authorTondelier, D.por
dc.contributor.authorVanel, J. C.por
dc.contributor.authorGeffroy, B.por
dc.contributor.authorBonnassieux, Y.por
dc.contributor.authorAlpuim, P.por
dc.contributor.authorBourée, J. E.por
dc.date.accessioned2015-01-14T11:31:28Z-
dc.date.available2015-01-14T11:31:28Z-
dc.date.issued2015-
dc.identifier.citationMajee, S., Cerqueira, M. F., Tondelier, D., Vanel, J. C., Geffroy, B., Bonnassieux, Y., . . . Bouree, J. E. (2015). Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma. Thin Solid Films, 575, 72-75. doi: 10.1016/j.tsf.2014.10.009-
dc.identifier.issn0040-6090por
dc.identifier.urihttp://hdl.handle.net/1822/32811-
dc.description"Available online 12 October 2014"por
dc.description.abstractIn this work SiNx thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiNx multilayers stacked and stacks of SiNx single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10− 3 g/m2day) for stacked SiNx single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiNx single-layers without Ar plasma treatment.por
dc.description.sponsorshipDirection des Relations Extérieures, Ecole polytechniquepor
dc.description.sponsorshipPICS (French-Portuguese) project no. 5336.por
dc.language.isoengpor
dc.publisherElsevierpor
dc.rightsopenAccesspor
dc.subjectSilicon nitridepor
dc.subjectAr-plasma treatmentpor
dc.subjectPermeation barrierpor
dc.subjectHW-CVDpor
dc.titlePermeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasmapor
dc.typearticlepor
dc.peerreviewedyespor
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0040609014009705#por
sdum.publicationstatuspublishedpor
oaire.citationStartPage72por
oaire.citationEndPage75por
oaire.citationTitleThin solid filmspor
oaire.citationVolume575por
dc.identifier.doi10.1016/j.tsf.2014.10.009por
dc.subject.fosEngenharia e Tecnologia::Engenharia dos Materiaispor
dc.subject.wosScience & Technologypor
sdum.journalThin solid filmspor
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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