Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/31966

TitleAll-inkjet-printed bottom-gate thin-film transistors using UV curable dielectric for well-defined source-drain electrodes
Author(s)Castro, H. F.
Sowade, E.
Rocha, J. G.
Alpuim, P.
Baumann, R. R.
Lanceros-Méndez, S.
KeywordsOrganic thin-film transistors
printed electronics
all-inkjet-printed
Issue dateJul-2014
PublisherSpringer
JournalJournal of Electronic Materials
CitationCastro, H. F., Sowade, E., Rocha, J. G., Alpuim, P., Lanceros-Méndez, S., & Baumann, R. R. (2014). All-Inkjet-Printed Bottom-Gate Thin-Film Transistors Using UV Curable Dielectric for Well-Defined Source-Drain Electrodes. Journal of Electronic Materials, 43(7), 2631-2636.
Abstract(s)Technological restrictions of the inkjet printing technology for printed electronics can hinder its application potential, mainly due to the limited resolution and layer homogeneity in comparison to conventional manufacturing techniques for electronics. The manufacturing of active devices such as thin-film transistors with appropriate performance using printing technologies is still one of the current challenges towards industrial applications. This work demonstrates the application of an ultraviolet (UV) curable ink as insulating material for the gate dielectric. The advantage of the UV curable ink is its fast curing and the smooth surface enabling high resolution patterns on top of it. In this way, all-inkjet-printed organic thin-film transistors (OTFTs) were fabricated with silver electrodes, UV curable gate dielectric, and 6,13-bis(triisopropylsilylethynyl)pentacene for the active semiconductor layer. By fine tuning of processing parameters and pattern geometries, a stable channel length of about 10 μm was obtained in the bottom-gate configuration without the need of additional steps, suggesting a way to build low-cost all-inkjet-printed OTFTs with well-defined source-drain electrodes and fast UV curable dielectric without any additional steps. The inkjet-printed device is characterized by an electron mobility of 0.012 cm2 V−1 s−1 and on/off ratio of 103.
TypeArticle
URIhttp://hdl.handle.net/1822/31966
DOI10.1007/s11664-014-3143-0
ISSN0361-5235
Publisher versionhttp://link.springer.com/article/10.1007/s11664-014-3143-0
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FCD - Artigos/Papers (with refereeing)

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