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|Title:||Inﬂuence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties|
|Author(s):||Vieira, E. M. F.|
Roldan, M. A.
Barradas, Nuno P.
Correia, M. R.
Rolo, Anabela G.
Pennycook, S. J.
Molina, S. I.
Gomes, M. J. M.
Magnetron sputtering deposition
|Journal:||Journal of Physics D: Applied Physics|
|Abstract(s):||In this work, we investigate the structural and photoluminescence (PL) properties of (SiGe+Al2O3)/Al2O3 multi-layer ﬁlms with layer thicknesses in the range of a few nanometres. The ﬁlms were prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small SiGe nanocrystals (NCs) (∼ 3 to 5 nm) embedded between ultra-thin (∼ 6 nm thickness) Al2O3 layers. Our results show that the structural and compositional properties of the ﬁlms can be tuned by changing the RF-power. It is found that nearly spherical and well conﬁned isolated SiGe NCs (∼ 5 nm) are obtained for an RF-power value of 80 W. The PL properties of the ﬁlms were studied and optical emission in the blue visible wavelength region was observed.|
|Description:||The authors would like to thank Professor David J Barber (University of Essex) for his helpful discussions and critical reading of this manuscript, and Engineer José Santos for technical support at Thin Film Laboratory.|
|Access:||Restricted access (UMinho)|
|Appears in Collections:||CDF - CEP - Artigos/Papers (with refereeing)|
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