Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/27466

TitleInfluence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties
Author(s)Vieira, E. M. F.
Martín-Sánchez, J.
Roldan, M. A.
Varela, M.
Buljan, Maja
Bernstorff, Sigrid
Barradas, Nuno P.
Franco, Nuno
Correia, M. R.
Rolo, Anabela G.
Pennycook, S. J.
Molina, S. I.
Alves, Eduardo
Chahboun, A.
Gomes, M. J. M.
KeywordsSiGe
Nanocrystals
Raman
RBS
GISAXS
Multi-layer films
HRTEM
XRR
Magnetron sputtering deposition
HAADF-STEM
EELS
Photoluminescence (PL)
Issue date4-Sep-2013
PublisherIOP Publishing
JournalJournal of Physics D: Applied Physics
Abstract(s)In this work, we investigate the structural and photoluminescence (PL) properties of (SiGe+Al2O3)/Al2O3 multi-layer films with layer thicknesses in the range of a few nanometres. The films were prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small SiGe nanocrystals (NCs) (∼ 3 to 5 nm) embedded between ultra-thin (∼ 6 nm thickness) Al2O3 layers. Our results show that the structural and compositional properties of the films can be tuned by changing the RF-power. It is found that nearly spherical and well confined isolated SiGe NCs (∼ 5 nm) are obtained for an RF-power value of 80 W. The PL properties of the films were studied and optical emission in the blue visible wavelength region was observed.
TypeArticle
DescriptionThe authors would like to thank Professor David J Barber (University of Essex) for his helpful discussions and critical reading of this manuscript, and Engineer José Santos for technical support at Thin Film Laboratory.
URIhttp://hdl.handle.net/1822/27466
ISSN0022-3727 (Print)
1361-6463 (Online)
Publisher versionhttp://iopscience.iop.org/0022-3727/46/38/385301
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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