Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/27346

TitleStudy on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers
Author(s)Gontad, F.
Filonovich, Sergej
Cerqueira, M. F.
Alpuim, P.
Chiussi, Stefano
KeywordsExcimer laser annealing
Dehydrogenation
Hydrogenated amorphous silicon
Boron doped nanocrystalline silicon
Issue date17-Apr-2013
PublisherElsevier
JournalThin Solid Films
Abstract(s)We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystal-lization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p+-nc-Si:H films without damaging the substrate.
TypeArticle
URIhttp://hdl.handle.net/1822/27346
DOI10.1016/j.tsf.2013.04.005
ISSN0040-6090
Publisher versionwww.elsevier.com/locate/tsf
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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