Silicon nitride thin-films by RF sputtering : application on solid state lithium batteries

Abstract

Silicon nitride is the most common barrier material to protect microsystems from atmosphere, usually deposited through CVD techniques. In this paper our aim is to highlight the advantages brought by using PVD techniques, namely RF sputtering, to deposit silicon nitride thin-films. In particular, we intend to protect microsystems fabricated only by PVD techniques and avoid the necessity of a second CVD chamber to do the microsystem coating. The influence of gases (Ar/N2) during deposition was correlated with film composition and with measured electrical and optical properties. Featuring electric resistivity of 9.51E11 Ω.cm, a breakdown field of 1.67 MV/cm and refractive index between 1.92 and 1.84 (measured at 650 nm) silicon nitride deposited by RF sputtering is a good complementary layer of Li3PO4 or Ti for the protection of metallic lithium anode of solid state lithium batteries.