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TitleCharge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers
Author(s)Vieira, E. M. F.
Diaz, Regis
Grisolia, Jeremie
Parisini, Andrea
Martín-Sánchez, J.
Levichev, S.
Rolo, Anabela G.
Chahboun, A.
Gomes, M. J. M.
KeywordsElectrical properties
RF magnetron sputtering
Capacitance–voltage measurements
Memory effect
Charge retention
Amorphous SiGe
Memory applications
Issue date7-Feb-2013
PublisherIOP Publishing
JournalJournal of Physics D: Applied Physics
Abstract(s)In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ºC). Capacitance–voltage measurements show that the introduction of the SiGe layer leads to a significant enhancement of the charge trapping capabilities, with the memory effect and charge retention time larger for hole carriers. The presented results demonstrate that amorphous floating-gate SiGe layers embedded in SiO2 may constitute a suitable alternative for memory applications.
DescriptionThe authors would also like to thank Engineer José Santos for technical support at the Thin Film Laboratory.
Publisher version
AccessRestricted access (UMinho)
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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