Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/18854

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dc.contributor.authorMartín-Sánchez, J.-
dc.contributor.authorMarques, L.-
dc.contributor.authorVieira, E. M. F.-
dc.contributor.authorDoan, Q. T.-
dc.contributor.authorMarchand, A.-
dc.contributor.authorEl Hdiy, A.-
dc.contributor.authorRolo, Anabela G.-
dc.contributor.authorPinto, S. R. C.-
dc.contributor.authorRamos, Marta M. D.-
dc.contributor.authorChahboun, A.-
dc.contributor.authorGomes, M. J. M.-
dc.date.accessioned2012-04-24T11:09:17Z-
dc.date.available2012-04-24T11:09:17Z-
dc.date.issued2012-04-
dc.identifier.issn1388-0764por
dc.identifier.issn1572-896Xpor
dc.identifier.urihttp://hdl.handle.net/1822/18854-
dc.description.abstractIn this work, we report on the synthesis of Ge nanocrystals (NCs) by pulsed laser deposition (PLD) at room temperature (RT) in an argon atmosphere without any further annealing process. Our results show that functional thin films of crystalline Ge nanoparticles with spherical shapes can be obtained by PLD directly on alumina layers deposited on n-doped Si (100) substrates. In addition, we also demonstrate that a uniform size distribution of NCs with an average diameter of about 3 nm and a density of 2.3x10^11 cm^-2 can be obtained by optimizing a shadow mask set-up, where a solid disk is introduced between the target and the substrate. Charge/discharge effects in Ge NCs deposited on a high-k amorphous alumina layer are also evidenced by conductive atomic force microscopy, which makes them suitable for memory applications.por
dc.description.sponsorshipFundação para a Ciência e a Tecnologia (FCT) - PTDC/FIS/70194/2006, SFRH/BD/29657/2006, SFRH/BD/45410/2008, SFRH/BPD/64850/2009por
dc.description.sponsorshipEuropean COST MP0901-NanoTPpor
dc.description.sponsorshipCOMPETEpor
dc.language.isoengpor
dc.publisherSpringer Verlagpor
dc.rightsrestrictedAccesspor
dc.subjectPulsed laser depositionpor
dc.subjectGermanium nanocrystalspor
dc.subjectShadow maskpor
dc.subjectRoom temperaturepor
dc.subjectSemiconductorpor
dc.subjectSynthesispor
dc.titleGe nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping propertiespor
dc.typearticlepor
dc.peerreviewedyespor
dc.relation.publisherversionhttp://www.springerlink.com/por
sdum.publicationstatuspublishedpor
oaire.citationStartPage843por
oaire.citationIssue5por
oaire.citationTitleJournal of Nanoparticle Researchpor
oaire.citationVolume14por
dc.identifier.doi10.1007/s11051-012-0843-3por
dc.subject.wosScience & Technologypor
sdum.journalJournal of Nanoparticle Researchpor
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FCT - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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