Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/18854

TitleGe nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties
Author(s)Martín-Sánchez, J.
Marques, L.
Vieira, E. M. F.
Doan, Q. T.
Marchand, A.
El Hdiy, A.
Rolo, Anabela G.
Pinto, S. R. C.
Ramos, Marta M. D.
Chahboun, A.
Gomes, M. J. M.
KeywordsPulsed laser deposition
Germanium nanocrystals
Shadow mask
Room temperature
Semiconductor
Synthesis
Issue dateApr-2012
PublisherSpringer Verlag
JournalJournal of Nanoparticle Research
Abstract(s)In this work, we report on the synthesis of Ge nanocrystals (NCs) by pulsed laser deposition (PLD) at room temperature (RT) in an argon atmosphere without any further annealing process. Our results show that functional thin films of crystalline Ge nanoparticles with spherical shapes can be obtained by PLD directly on alumina layers deposited on n-doped Si (100) substrates. In addition, we also demonstrate that a uniform size distribution of NCs with an average diameter of about 3 nm and a density of 2.3x10^11 cm^-2 can be obtained by optimizing a shadow mask set-up, where a solid disk is introduced between the target and the substrate. Charge/discharge effects in Ge NCs deposited on a high-k amorphous alumina layer are also evidenced by conductive atomic force microscopy, which makes them suitable for memory applications.
TypeArticle
URIhttp://hdl.handle.net/1822/18854
DOI10.1007/s11051-012-0843-3
ISSN1388-0764
1572-896X
Publisher versionhttp://www.springerlink.com/
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FCT - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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