Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/18462

TitleElectrical conduction of CdSe nanocrystals embedded in silicon oxide films
Author(s)Levichev, S.
Mamor, Mohammed
Rolo, Anabela G.
Pinto, S. R. C.
Khodorov, Anatoli Anatolievich
Gomes, M. J. M.
KeywordsQuantum dots
Thin-films
Photoluminescence
Clusters
Diodes
CdSe Nanocrystals
Magnetron Sputtering
Optical Properties
I-V Measurements
L-V measurements
Issue dateJun-2009
PublisherAmerican Scientific Publishers
JournalJournal of Nanoscience and Nanotechnology
Abstract(s)In this paper we report on the structural, optical and electrical properties of CdSe nanocrystals (NCs) embedded in silica matrix grown by the rf-magnetron sputtering technique with subsequent annealing under argon flux. Grazing incidence X-ray diffraction (GIXD), Photoluminescence (PL) and Raman spectroscopy, as well as current-voltage (I-V) measurements were used to characterize the CdSe NCs. The PL spectra of annealed samples demonstrate the presence of peaks in the range of 550-620 rim, indicating the quantum confinement effect in CdSe NCs. This quantum confinement effect in CdSe NCs was also confirmed by Raman spectroscopy. Finally, I-V behavior was explained by different concentrations and sizes of CdSe NCs.
TypeArticle
DescriptionAuthors thanks in particular the help of Professor T.H. Metzger scientific responsible of ID01 beamline at ESRF Grenoble for XRD data. Also authors would like to thank Dr. A.Chahboun for reading the manuscript and valuable remarks.One of the authors, M.Mamor is grateful for the support of Sultan Qaboos University.
URIhttp://hdl.handle.net/1822/18462
DOI10.1166/jnn.2009.NS11
ISSN1533-4880
Publisher versionhttp://openurl.ingenta.com/content?genre=article&issn=1533-4880&volume=9&issue=6&spage=3418&epage=3423
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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