Please use this identifier to cite or link to this item:
|Title:||Electrical conduction of CdSe nanocrystals embedded in silicon oxide films|
Rolo, Anabela G.
Pinto, S. R. C.
Khodorov, Anatoli Anatolievich
Gomes, M. J. M.
|Publisher:||American Scientific Publishers|
|Journal:||Journal of Nanoscience and Nanotechnology|
|Abstract(s):||In this paper we report on the structural, optical and electrical properties of CdSe nanocrystals (NCs) embedded in silica matrix grown by the rf-magnetron sputtering technique with subsequent annealing under argon flux. Grazing incidence X-ray diffraction (GIXD), Photoluminescence (PL) and Raman spectroscopy, as well as current-voltage (I-V) measurements were used to characterize the CdSe NCs. The PL spectra of annealed samples demonstrate the presence of peaks in the range of 550-620 rim, indicating the quantum confinement effect in CdSe NCs. This quantum confinement effect in CdSe NCs was also confirmed by Raman spectroscopy. Finally, I-V behavior was explained by different concentrations and sizes of CdSe NCs.|
|Description:||Authors thanks in particular the help of Professor T.H. Metzger scientific responsible of ID01 beamline at ESRF Grenoble for XRD data. Also authors would like to thank Dr. A.Chahboun for reading the manuscript and valuable remarks.One of the authors, M.Mamor is grateful for the support of Sultan Qaboos University.|
|Access:||Restricted access (UMinho)|
|Appears in Collections:||CDF - FMNC - Artigos/Papers (with refereeing)|
Files in This Item:
|Electrical Conduction of CdSe Nanocrystals Embedded in Silicon Oxide Films.pdf|
|Documento principal||229,47 kB||Adobe PDF||View/Open|