Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/17929

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dc.contributor.authorBarbosa, José Gusman-
dc.contributor.authorPereira, Mário R.-
dc.contributor.authorMoura, C.-
dc.contributor.authorMendes, J. A.-
dc.contributor.authorAlmeida, B. G.-
dc.date.accessioned2012-03-20T14:40:05Z-
dc.date.available2012-03-20T14:40:05Z-
dc.date.issued2011-10-
dc.identifier.issn1533-4880por
dc.identifier.urihttp://hdl.handle.net/1822/17929-
dc.description.abstractBarium titanate (BaTiO3) thin films have been prepared by electrophoretic deposition on p-doped and platinum covered silicon (Si) substrates. Their structure, nanostructure and dielectric properties were characterized. The as-deposited films were polycrystalline and composed by barium titanate nanograins with an average grain size ~9 nm. Annealing at high temperatures promoted grain growth, so that the samples annealed at 600 ºC presented average grain sizes ~24 nm. From Raman spectroscopy measurements it was found that the tetragonal (ferroelectric) BaTiO3 phase was stabilized on the films. Also, at higher annealing temperatures, cation disorder was reduced on the films. From measurements of the temperature dependence of the dielectric permittivity the corresponding paraelectric-ferroelectric phase transition was determined. The observed transition temperature (~100ºC) was found to be below the BaTiO3 bulk or thick film values, due to the small nanosized grains composing the films.por
dc.description.sponsorshipFundação para a Ciência e Tecnologia (FCT)por
dc.description.sponsorshipFEDERpor
dc.language.isoengpor
dc.publisherAmerican Scientific Publisherspor
dc.rightsrestrictedAccesspor
dc.subjectBariumpor
dc.subjectTitanatepor
dc.subjectSolgelpor
dc.subjectElectrophoresispor
dc.subjectBarium Titanate Filmspor
dc.subjectElectrophoretic Depositionpor
dc.subjectAnnealingpor
dc.subjectRaman Spectroscopypor
dc.subjectDielectric Propertiespor
dc.titleBarium titanate thin films deposited by electrophoresis on p-doped si(001) substratespor
dc.typearticlepor
dc.peerreviewedyespor
dc.relation.publisherversionhttp://www.ingentaconnect.com/por
sdum.publicationstatuspublishedpor
oaire.citationStartPage8700por
oaire.citationEndPage8704por
oaire.citationIssue10por
oaire.citationVolume11por
dc.identifier.doi10.1166/jnn.2011.3494por
dc.subject.wosScience & Technologypor
sdum.journalJournal of Nanoscience and Nanotechnologypor
Appears in Collections:CDF - FAMO - Artigos/Papers (with refereeing)

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