Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/16468

TitleCharging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
Author(s)Levichev, S.
Chahboun, A.
Basa, P.
Rolo, Anabela G.
Barradas, N. P.
Alves, E.
Horvath, Zs. J.
Conde, O.
Gomes, M. J. M.
KeywordsCdSe
Nanocrystals
SiO2
Charging effect
Issue date16-Sep-2008
PublisherElsevier
JournalMicroelectronic Engineering
Abstract(s)Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance–voltage (C–V) combined with current–voltage (I–V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler–Nordheim tunnelling and Poole–Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.
TypeArticle
DescriptionS.L. thanks FCT for the financial support through the Grant SFRH/BPD/26532/ 2006.
URIhttp://hdl.handle.net/1822/16468
DOI10.1016/j.mee.2008.09.003
ISSN0167-9317
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0167931708003948
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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