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|Title:||Low-temperature fabrication of layered self organized ge clusters by RF-sputtering|
|Author(s):||Pinto, S. R. C.|
Rolo, Anabela G.
Barradas, N. P.
Kashtiban, R. J.
Gomes, M. J. M.
|Keywords:||GISAXS grazing incidence small angle X-ray scattering|
HRTEM high resolution transmission electron microscopy
RBS: Rutherford backscattering spectrometry
XPS: X-ray photoelectron spectroscopy
(Ge + SiO2) / SiO2 multilayers
|Journal:||Nanoscale Research Letters|
|Abstract(s):||In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.|
|Appears in Collections:||CDF - FCT - Artigos/Papers (with refereeing)|
CDF - FMNC - Artigos/Papers (with refereeing)
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