Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/15689

TitleLow-temperature fabrication of layered self organized ge clusters by RF-sputtering
Author(s)Pinto, S. R. C.
Rolo, Anabela G.
Buljan, M.
Chahboun, A.
Bernstorff, S.
Barradas, N. P.
Alves, E.
Kashtiban, R. J.
Bangert, U.
Gomes, M. J. M.
KeywordsGISAXS grazing incidence small angle X-ray scattering
HRTEM high resolution transmission electron microscopy
NCs: nanocrystals
Ge clusters
RBS: Rutherford backscattering spectrometry
XPS: X-ray photoelectron spectroscopy
Raman spectroscopy
Magnetron sputtering
(Ge + SiO2) / SiO2 multilayers
Low temperature
Issue date14-Apr-2011
PublisherSpringer Verlag
JournalNanoscale Research Letters
Abstract(s)In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.
TypeArticle
URIhttp://hdl.handle.net/1822/15689
DOI10.1186/1556-276X-6-341
ISSN1556-276X
Publisher versionhttp://www.nanoscalereslett.com/
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - FCT - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

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