Please use this identifier to cite or link to this item:

TitleMicrocrystalline silicon thin films prepared by RF reactive magnetron sputter deposition
Author(s)Cerqueira, M. F.
Andritschky, M.
Rebouta, L.
Ferreira, J. A.
Silva, M. F.
KeywordsHydrogenated microcrystalline silicon
Magnetron sputtering
X-ray diffraction
Raman spectroscopy
Issue date1995
Abstract(s)Hydrogenated microcrystalline silicon (microc-Si:H) thin films with Cu as a dopant material (about 2 wt.%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma. The composition and microstructure of the films were analysed by SEM, ERD/RBS, X-ray diffraction and Raman spectroscopy. These techniques revealed a columnar film structure, each column consisting of several small (nano) crystals with a lateral dimension up to 10nm. The crystals are oriented, generally with the (111) plane parallel to the sample surface. The hydrogen content of the thin films is about 27-33 at.%. Low deposition rates and low sputter gas pressures favour crystallisation and grain growth. The behaviour can be understood in terms of the diffusion or relaxation length of the deposited Si-atoms.
Publisher version
AccessOpen access
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

Files in This Item:
File Description SizeFormat 
RF-Si-Vac1995.pdfDocumento principal859,99 kBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID