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TitlePhotoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
Author(s)Cerqueira, M. F.
Stepikhova, M.
Ferreira, J. A.
Nanocrystalline silicon
Issue date2001
JournalMaterials Science & Engineering: B
Abstract(s)Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.
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Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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