Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/14173

TitlePhotoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
Author(s)Cerqueira, M. F.
Stepikhova, M.
Ferreira, J. A.
KeywordsPhotoluminescence
Erbium
Nanocrystalline silicon
Issue date2001
PublisherElsevier
JournalMaterials Science & Engineering: B
Abstract(s)Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.
Typearticle
URIhttp://hdl.handle.net/1822/14173
DOI10.1016/S0921-5107(00)00684-X
ISSN0921-5107
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S092151070000684X
Peer-Reviewedyes
AccessopenAccess
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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