Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/14015

TitleDielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size
Author(s)Losurdo, M.
Giangregorio, M. M.
Capezzuto, Pio
Bruno, G.
Cerqueira, M. F.
Alves, E.
Stepikhova, M.
KeywordsDielectric function
Nanocrystalline silicon
Ellipsometry
Issue date2003
PublisherAIP Publishing
JournalApplied Physics Letters
Abstract(s)The dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. ATauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites cannot be detected by x-ray diffraction and Raman spectroscopy.
TypeArticle
URIhttp://hdl.handle.net/1822/14015
DOI10.1063/1.1569052
ISSN0003-6951
Publisher versionhttp://apl.aip.org/resource/1/applab/v82/i18/p2993_s1
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

Files in This Item:
File Description SizeFormat 
SE-SiEr-APL2003.pdfDocumento principal649 kBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID