Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13985

TitleThe role of microstructure in luminescent properties of Er-doped nanocrystalline Si thin films
Author(s)Stepikhova, M.
Cerqueira, M. F.
Losurdo, M.
Giangregorio, M. M.
Alves, E.
Monteiro, T.
Soares, Manuel Jorge
KeywordsPhotoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
Issue date2004
PublisherSpringer
JournalPhysics of the Solid State
Abstract(s)In this contribution, we present a structural and photoluminescence (PL) analysis of Er-doped nanocrystalline silicon thin films produced by rf magnetron sputtering method. We show the strong influence of the presence of nanocrystalline fraction in films on their luminescence efficiency at 1.54 microm studied on a series of specially prepared samples with different crystallinity, i.e., percentage and sizes of Si nanocrystals. A strong increase, by about two orders of magnitude, of Er-related PL intensity in these samples with lowering of the Si nanocrystal sizes from 7.9 to about 1.5 nm is observed. The results are discussed in terms of the sensitization effect of Si nanocrystals on Er ions
Typearticle
URIhttp://hdl.handle.net/1822/13985
DOI10.1134/1.1641935
ISSN1063-7834
Publisher versionhttp://journals.ioffe.ru/ftt/2004/01/p114-118.pdf
Peer-Reviewedyes
AccessopenAccess
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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