Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13965

TitleThe structure and photoluminescence of erbium-doped nanocrystalline silicon thin films produced by reactive magnetron sputtering
Author(s)Cerqueira, M. F.
Losurdo, M.
Stepikhova, M.
Conde, O.
Giangregorio, M. M.
Pinto, Pedro
Ferreira, J. A.
KeywordsNanocrystalline silicon
Erbium
Raman
X-ray
Ellipsometry
photoluminescence
spectroscopic ellipsometry (SE)
Issue date2002
PublisherTrans Tech Publications
JournalSolid State Phenomena
Abstract(s)We have produced and studied undoped and erbium-doped nanocrystalline silicon thin films in order to evaluate the erbium influence on the film microstructure and how this correlates with the photoluminescence properties. Films were grown by reactive RF sputtering. For the doped films metallic erbium was added to the c-Si target. The structural parameters and the chemical composition of the different samples were investigated by X-ray in the grazing incidence geometry, Raman spectroscopy, ellipsometry and Rutherford Back Scattering. The effect of the nc-Si/SiOx matrix ,i.e., nc-Si volume fraction and the presence of SiO and/or SiO2 phases, on the erbium photoluminescence efficiency is discussed.
TypeConference paper
URIhttp://hdl.handle.net/1822/13965
ISBN3908450640
ISSN1012-0394
Publisher versionhttp://www.mendeley.com/research/structure-photoluminescence-erbiumdoped-nanocrystalline-silicon-thin-films-produced-reactive-magnetron-sputtering/
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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