Utilize este identificador para referenciar este registo: http://hdl.handle.net/1822/13958

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dc.contributor.authorCerqueira, M. F.-
dc.contributor.authorStepikhova, M.-
dc.contributor.authorLosurdo, M.-
dc.contributor.authorGiangregorio, M. M.-
dc.contributor.authorAlves, E.-
dc.contributor.authorMonteiro, T.-
dc.contributor.authorSoares, Manuel J.-
dc.contributor.authorBoemare, C.-
dc.date.accessioned2011-10-21T13:40:14Z-
dc.date.available2011-10-21T13:40:14Z-
dc.date.issued2003-
dc.identifier.issn0026-2692por
dc.identifier.urihttp://hdl.handle.net/1822/13958-
dc.description.abstractNanocrystalline silicon thin films doped with erbium were produced by reactive magnetron RF sputtering. Their structural and chemical properties were studied by X-ray diffractometry at grazing incidence, micro-Raman, spectroscopic ellipsometry and Rutherford Backscattering Spectroscopy, respectively. Films with different crystalline fraction and crystallite size were deposited. Since the luminescence efficiency of Er-doped nc-Si films is strongly influenced by the microstructure and impurity content (i.e. H, O, Er), the photoluminescence characteristics are discussed in terms of the microstructure. The novelty of these films, if compared to usually investigated structures with the nanocrystals embedded in SiO2, is their relative high conductivity, which makes them attractive for device applications.por
dc.language.isoengpor
dc.publisherElsevierpor
dc.rightsopenAccesspor
dc.subjectPhotoluminescencepor
dc.subjectErbiumpor
dc.subjectNanocrystalline siliconpor
dc.subjectEllipsometrypor
dc.subjectX-ray diffractometrypor
dc.subjectspectroscopic ellipsometrypor
dc.titleInfluence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin filmspor
dc.typearticlepor
dc.peerreviewedyespor
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0026269203000284por
dc.publicationstatuspublishedpor
degois.publication.firstPage375por
degois.publication.lastPage378por
degois.publication.issue5-8por
degois.publication.titleMicroelectronics Journalpor
degois.publication.volume34por
dc.identifier.doi10.1016/S0026-2692(03)00028-4por
dc.subject.wosScience & Technologypor
sdum.journalMicroelectronics Journalpor
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CDF - FMNC - Artigos/Papers (with refereeing)

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