Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13958

TitleInfluence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
Author(s)Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Alves, E.
Monteiro, T.
Soares, Manuel J.
Boemare, C.
KeywordsPhotoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
X-ray diffractometry
spectroscopic ellipsometry
Issue date2003
PublisherElsevier
JournalMicroelectronics Journal
Abstract(s)Nanocrystalline silicon thin films doped with erbium were produced by reactive magnetron RF sputtering. Their structural and chemical properties were studied by X-ray diffractometry at grazing incidence, micro-Raman, spectroscopic ellipsometry and Rutherford Backscattering Spectroscopy, respectively. Films with different crystalline fraction and crystallite size were deposited. Since the luminescence efficiency of Er-doped nc-Si films is strongly influenced by the microstructure and impurity content (i.e. H, O, Er), the photoluminescence characteristics are discussed in terms of the microstructure. The novelty of these films, if compared to usually investigated structures with the nanocrystals embedded in SiO2, is their relative high conductivity, which makes them attractive for device applications.
TypeArticle
URIhttp://hdl.handle.net/1822/13958
DOI10.1016/S0026-2692(03)00028-4
ISSN0026-2692
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0026269203000284
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)
CDF - FMNC - Artigos/Papers (with refereeing)

Files in This Item:
File Description SizeFormat 
PLvsCD-SiEr-MJ2003.pdfDocumento principal271,72 kBAdobe PDFView/Open

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu ORCID