Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/13911

TítuloEffect of the matrix on the 1.5 microm photoluminescence of Er-doped silicon quantum dots
Autor(es)Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Monteiro, T.
Soares, Manuel Jorge
Peres, M.
Neves, A.
Alves, E.
Palavras-chaveSilicon QD
Ellipsometry
Photoluminescence
Structure
Data2006
EditoraTrans Tech Publications
RevistaMaterials Science Forum
Resumo(s)Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f. sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 microm photoluminescence is discussed.
TipoArtigo em ata de conferência
URIhttps://hdl.handle.net/1822/13911
ISBN9780878494026
ISSN0255-5476
Versão da editorahttp://www.scientific.net/MSF.514-516.1116
Arbitragem científicayes
AcessoAcesso aberto
Aparece nas coleções:CDF - FMNC - Artigos/Papers (with refereeing)

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