Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13911

TitleEffect of the matrix on the 1.5 microm photoluminescence of Er-doped silicon quantum dots
Author(s)Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Monteiro, T.
Soares, Manuel Jorge
Peres, M.
Neves, A.
Alves, E.
KeywordsSilicon QD
Ellipsometry
Photoluminescence
Structure
Issue date2006
PublisherTrans Tech Publications
JournalMaterials Science Forum
Abstract(s)Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f. sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 microm photoluminescence is discussed.
TypeConference paper
URIhttp://hdl.handle.net/1822/13911
ISBN9780878494026
ISSN0255-5476
Publisher versionhttp://www.scientific.net/MSF.514-516.1116
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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