Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13773

TitlePhotoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques : the effects os microstructure and chemical composition
Author(s)Cerqueira, M. F.
Losurdo, M.
Stepikhova, M.
Alpuim, P.
Andrês, G.
Kozanecki, A.
Soares, Manuel Jorge
Peres, M.
KeywordsErbium
Nanocrystalline silicon
Photoluminescence
Issue date2009
PublisherElsevier
JournalThin Solid Films
Abstract(s)Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er3+ photoluminescence efficiency.
Typearticle
URIhttp://hdl.handle.net/1822/13773
DOI10.1016/j.tsf.2009.02.146
ISSN0040-6090
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0040609009004441
Peer-Reviewedyes
AccessopenAccess
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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