Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13767

TitleStructural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films
Author(s)Cerqueira, M. F.
Alpuim, P.
Filonovich, Sergej
Alves, E.
Rolo, Anabela G.
Andrês, G.
Soares, J.
Kozanecki, A.
KeywordsNanocrystalline silicon thin films
RFCVD
HWCVD
Structural properties
Er emission
Issue date2009
PublisherWiley-VCH Verlag
Journalphysica status solidi (a)
Abstract(s)Hydrogenated amorphous and nanocrystalline silicon thin films deposited by Hot Wire (HW) and Radio-Frequency Plasma-Enhanced (RF) Chemical Vapor Deposition were Er-bium-implanted. Their pre-implantation structural properties and post-implantation optical properties were studied and cor-related. After one-hour annealing at 150ºC in nitrogen atmos-phere only amorphous films showed photoluminescence (PL) activity at 1.54 μm, measured at 5 K. After further annealing at 300oC for one hour, all the samples exhibited a sharp PL peak positioned at 1.54 m, with a FWHM of ~5 nm. Amorphous films deposited by HW originated a stronger PL peak than corresponding films deposited by RF, while in na-nocrystalline films PL emission was much stronger in sam-ples deposited by RF than by HW. There was no noticeable difference in Er3+ PL activity be-tween films implanted with 1x1014 atoms/cm2 and 5x1015 at-oms/cm2 Er doses.
TypeArticle
URIhttp://hdl.handle.net/1822/13767
DOI10.1002/pssa.200881785
ISSN1862-6300
Publisher versionhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.200881785/pdf
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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