Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13766

TitleThe influence of electric field on the microstructure of nc-Si:H films produced by RF magnetron sputtering
Author(s)Thaiyalnayaki, V.
Cerqueira, M. F.
Ferreira, J. A.
Tovar, J.
Keywordsnc-Si
Stress
Optical properties
Thin films
Issue date2008
PublisherElsevier
JournalVacuum
Abstract(s)Hydrogenated nanocrystalline silicon thin films were prepared by RF magnetron sputtering. Different bias fields (no bias–no ground, grounded and negative bias) were applied to the substrate. The effect of the ion bombardment on the structure, chemical composition and optical property were studied by Raman spectroscopy, X-ray diffraction, Rutherford backscattering (RBS) and optical transmission spectroscopy. The deposition rate and the optical bandgap decrease as the bias voltage increases from 0 to -50 V. The structural characterization indicates that compressive stress is developed in plane and tensile stress is induced in the growth direction. No significant variation on the chemical composition was observed.
TypeArticle
URIhttp://hdl.handle.net/1822/13766
DOI10.1016/j.vacuum.2008.03.054
ISSN0042-207X
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0042207X08001371
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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