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TitleEffect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
Author(s)Cerqueira, M. F.
Semikina, T. V.
Baidus, N. V.
Alves, E.
KeywordsAmorphous silicon
Raman spectroscopy
Electrical properties
Issue date2010
JournalInternational Journal of Materials and Product Technology
Abstract(s)The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure
Publisher version
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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