Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13751

TitleEffect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
Author(s)Cerqueira, M. F.
Semikina, T. V.
Baidus, N. V.
Alves, E.
KeywordsAmorphous silicon
Nanocrystal
Raman spectroscopy
Electrical properties
Issue date2010
PublisherInderscience
JournalInternational Journal of Materials and Product Technology
Abstract(s)The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure
TypeArticle
URIhttp://hdl.handle.net/1822/13751
DOI10.1504/IJMPT.2010.034271
ISSN0268-1900
Publisher versionhttp://www.inderscience.com/search/index.php?action=record&rec_id=34271
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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