Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13750

TitleElectrical and raman scattering studies of ZnO:P and ZnO:Sb thin films
Author(s)Campos, J. Ayres de
Viseu, T. M. R.
Rolo, Anabela G.
Barradas, N. P.
Alves, E.
Lacerda-Arôso, T. de Lacerda
Cerqueira, M. F.
KeywordsZnO
Ion implantation
p-type doping
X-ray
Hall effect
Raman
Issue date2010
PublisherAmerican Scientific Publishers
JournalJournal of Nanoscience and Nanotechnology
Abstract(s)A study on the structure, electrical and optical properties of ZnO thin films produced by r.f. magnetron sputtering and implanted either with phosphorous (P) or antimony (Sb) is reported in this work. Raman spectroscopy, X-ray diffraction, optical transmittance and Hall effect measurements have been employed to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that, after a 500ºC annealing, the doped films keep a polycrystalline nature with (002) preferred orientation. These films are very transparent and Hall effect results show that all have p-type conduction, despite doping ion and dose. The electric resistivity reaches values of 0.012 (cm) and 0.042 (cm) for the P and Sb-doped samples, respectively
TypeArticle
URIhttp://hdl.handle.net/1822/13750
DOI10.1166/jnn.2010.1381
ISSN1533-4880
Publisher versionhttp://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000004/art00052
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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