Utilize este identificador para referenciar este registo: http://hdl.handle.net/1822/13749

TítuloZnO thin films implanted with Al, Sb and P : optical, structural and electrical characterization
Autor(es)Viseu, T. M. R.
Campos, J. Ayres de
Rolo, Anabela G.
Arôso, T. de Lacerda
Cerqueira, M. F.
Alves, E.
Palavras-chaveZnO
Ion implantation
Optical properties
Raman
X-ray
Data2009
EditoraAmerican Scientific Publishers
RevistaJournal of Nanoscience and Nanotechnology
Resumo(s)In this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300ºC and 500ºC) have been employed. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction, transmittance and d.c conductivity measurements have been used to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that after annealing, doped films keep a polycrystalline nature with (002) preferred orientation. These films remain very transparent and the electrical conductivity increases significantly after the 500ºC annealing, reaching values of 10.9 (cm)-1 in the P-doped, 10.33 (cm)-1 in the Al-doped and 0.56 (cm)-1 in the Sb-doped samples
Tipoarticle
URIhttp://hdl.handle.net/1822/13749
DOI10.1166/jnn.2009.NS32
ISSN1533-4880
Versão da editorahttp://www.ingentaconnect.com/content/asp/jnn/2009/00000009/00000006
Arbitragem científicayes
AcessoopenAccess
Aparece nas coleções:CDF - FMNC - Artigos/Papers (with refereeing)

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