Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/13730

TitleStructural study of Si1-xGex nanocrystals embedded in SiO2 films
Author(s)Pinto, S. R. C.
Kashtiban, R. J.
Rolo, Anabela G.
Buljan, M.
Chahboun, A.
Bangert, U.
Barradas, N. P.
Alves, E.
Gomes, M. J. M.
KeywordsSi1−xGex
Nanocrystals
SiO2
HRTEM
GISAXS
Raman
Flash memory
Semiconductor
Si Ge 1 - x x
Issue date2010
PublisherElsevier
JournalThin Solid Films
Abstract(s)We have investigated the structural properties of Si1−xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1−xGex nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.
TypeArticle
URIhttp://hdl.handle.net/1822/13730
DOI10.1016/j.tsf.2009.09.148
ISSN0040-6090
Publisher versionhttp://www.sciencedirect.com/science/article/pii/S0040609009016186
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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