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TitleEffect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
Author(s)Meng Lijian
Gao Jinsong
Silva, R. A.
Song Shigeng
Thin films
Ion beam assisted deposition
IR reflectance
Optical and electrical properties
thin Film
Issue date30-Jun-2008
JournalThin Solid Films
Abstract(s)ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10−2 Pa at this oxygen flow).
Publisher version
AccessOpen access
Appears in Collections:CDF - GRF - Artigos/Papers (with refereeing)

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