Utilize este identificador para referenciar este registo: http://hdl.handle.net/1822/13693

TítuloZrOxNy decorative thin films prepared by the reactive gas pulsing process
Autor(es)Carvalho, P.
Cunha, L.
Alves, E.
Martin, N.
Le Bourhis, E.
Vaz, F.
EditoraIOP Publishing
RevistaJournal of Physics D: Applied Physics
Resumo(s)Zirconium oxynitride thin films were deposited by dc reactive magnetron sputtering. A zirconium metallic target was sputtered in an Ar + N2 + O2 atmosphere. Argon and nitrogen flow rates were maintained constant whereas oxygen was pulsed during the deposition, implementing the reactive gas pulsing process (RGPP). A constant pulsing period T = 3 s was used following an exponential periodic signal versus time. The introduction time of oxygen was systematically changed from 17% to 83% of the period. The RGPP allowed the synthesis of ZrOxNy films with tuneable metalloid concentrations adjusting the introduction time of the oxygen. Composition and structural variations associated with mechanical, optical and electrical properties exhibited a smooth transition, from metallic-like characteristics, typical of the fcc-ZrN phase, to semi-conducting behaviour corresponding to a mixture of orthorhombic-Zr3N4(O) and γ -Zr2ON2 crystalline phases.
Versão da editorahttp://iopscience.iop.org/0022-3727/42/19/195501/
Arbitragem científicayes
Aparece nas coleções:CDF - GRF - Artigos/Papers (with refereeing)

Ficheiros deste registo:
Ficheiro Descrição TamanhoFormato 
JPD AP-42 2009.pdfDocumento principal1,1 MBAdobe PDFVer/Abrir

Partilhe no FacebookPartilhe no TwitterPartilhe no DeliciousPartilhe no LinkedInPartilhe no DiggAdicionar ao Google BookmarksPartilhe no MySpacePartilhe no Orkut
Exporte no formato BibTex mendeley Exporte no formato Endnote Adicione ao seu Currículo DeGóis