Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/11846

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dc.contributor.authorMarins, Emílio Sérgio-
dc.contributor.authorGuduru, Virendra-
dc.contributor.authorRibeiro, Miguel-
dc.contributor.authorCerqueira, M. F.-
dc.contributor.authorBouattour, Ali-
dc.contributor.authorAlpuim, P.-
dc.date.accessioned2011-03-09T09:22:51Z-
dc.date.available2011-03-09T09:22:51Z-
dc.date.issued2011-01-21-
dc.identifier.citation"Physica Status Solidi C". ISSN 1610-1642. 8:3 (Jan. 2011) 846-849.por
dc.identifier.issn1610-1642por
dc.identifier.urihttp://hdl.handle.net/1822/11846-
dc.description.abstractNanocrystalline silicon (nc-Si:H) is commonly used in the bottom cell of tandem solar cells. With an indirect bandgap, nc-Si:H requires thicker (∼1 µm) films for efficient light harvesting than amorphous Si (a-Si:H) does. Therefore, thin-film high deposition rates are crucial for further cost reduction of highly efficient a–Si:H based photovoltaic technology. Plastic substrates allow for further cost reduction by enabling roll-to-roll inline deposition. In this work, high nc-Si:H deposition rates on plastic were achieved at low substrate temperature (150 °C) by standard Radio-frequency (13.56 MHz) Plasma Enhanced Chemical Vapor Deposition. Focus was on the influence of deposition pressure, inter-electrode distance (1.2 cm) and high power coupled to the plasma, on the hydrogen-to-silane dilution ratios (HD) necessary to achieve the amorphous-to-nanocrystalline phase transition and on the resulting film deposition rate. For each pressure and rf-power, there is a value of HD for which the films start to exhibit a certain amount of crystalline fraction. For constant rf-power, this value increases with pressure. Within the parameter range studied the deposition rate was highest (0.38 nm/s) for nc-Si:H films deposited at 6 Torr, 700 mW/cm2 using HD of 98.5 %. Decreasing the pressure to 3 Torr (1.5 Torr) and rf-power to 350 mW/cm2 using HD – 98.5 % deposition rate is 0.12 nm/s (0.076 nm/s). Raman crystalline fraction of these films is 72, 62 and 53 % for the 6, 3 and 1.5 Torr films, respectively.por
dc.description.sponsorshipFundação para a Ciência e a Tecnologia (FCT)por
dc.description.sponsorshipDREBM/PICS_CNRS/2010por
dc.language.isoengpor
dc.publisherWiley-VCH Verlagpor
dc.rightsopenAccesspor
dc.subjectNanocrystalline siliconpor
dc.subjectThin filmspor
dc.subjectHigh-rate depositionpor
dc.subjectSolar cellspor
dc.titleHigh-rate deposition of nano-crystalline silicon thin films on plasticspor
dc.typeconferencePaperpor
dc.peerreviewednopor
dc.relation.publisherversionhttp://onlinelibrary.wiley.compor
oaire.citationStartPage846por
oaire.citationEndPage849por
oaire.citationIssue3por
oaire.citationTitlePhysica Status Solidi Cpor
oaire.citationVolume8por
dc.identifier.doi10.1002/pssc.201000288por
dc.subject.wosScience & Technologypor
sdum.journalPhysica Status Solidi Cpor
sdum.conferencePublicationPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3por
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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