Please use this identifier to cite or link to this item: http://hdl.handle.net/1822/10981

TitleAlNxOy thin films deposited by DC reactive magnetron sputtering
Author(s)Borges, Joel Nuno Pinto
Vaz, F.
Marques, L.
KeywordsAluminium oxide
Aluminium nitride
DC magnetron
Reactive sputtering
Morphology
Structure
Electrical resistivity
Issue date2010
PublisherElsevier
JournalApplied Surface Science
Citation"Applied Surface Science". ISSN 0169-4332. 257:5 (2010) 1478-1483.
Abstract(s)AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al2O3 insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN x O y films were obtained, with the electrical resistivity of the films increasing with the non metallic/metallic ratio.
TypeArticle
URIhttp://hdl.handle.net/1822/10981
DOI10.1016/j.apsusc.2010.08.076
ISSN0169-4332
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - FCT - Artigos/Papers (with refereeing)
CDF - GRF - Artigos/Papers (with refereeing)

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