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DataTítuloAutor(es)TipoAcesso
2014Effect of bi-layer ratio in ZnO/Al2O3 multilayers on microstructure and functional properties of ZnO nanocrystals embedded in Al2O3 matrixSekhar, K. C.; Levichev, S.; Buljan, M., et al.ArtigoAcesso restrito UMinho
2012Effect of oxygen pressure on the structural and magnetic properties of thin Zn0.98Mn0.02O filmsKhodorov, Anatoli Anatolievich; Rolo, Anabela G.; Hlil, E. K., et al.ArtigoAcesso restrito UMinho
2012Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser depositionSilva, José Pedro Basto; Sekhar, K. C.; Almeida, A., et al.ArtigoAcesso aberto
2013Effect of rapid thermal annealing on texture and properties of pulsed laser deposited zinc oxide thin filmsSekhar, K. C.; Levichev, S.; Kamakshi, Koppole, et al.ArtigoAcesso restrito UMinho
2013Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin filmsSilva, J. P. B.; Sekhar, K. C.; Almeida, A., et al.ArtigoAcesso restrito UMinho
Jun-2009Electrical conduction of CdSe nanocrystals embedded in silicon oxide filmsLevichev, S.; Mamor, Mohammed; Rolo, Anabela G., et al.ArtigoAcesso restrito UMinho
2020Energy storage performance of ferroelectric ZrO2 film capacitors: effect of HfO2:Al2O3 dielectric insert layerSilva, José Pedro Basto; Silva, J. M. B.; Sekhar, K. C., et al.ArtigoAcesso restrito UMinho
21-Nov-2012Enhanced ferromagnetism and glassy state in phase separated La0.95Sr0.05MnO3 + δDe, K.; Das, S.; Roy, A., et al.ArtigoAcesso restrito UMinho
18-Dez-2015Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlOx structures for non-volatile memory applicationsFaita, F. L.; Silva, J. P. B.; Pereira, Mário, et al.ArtigoAcesso restrito UMinho
11-Abr-2017Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layerSilva, J. P. B.; Faita, F. L.; Kamakshi, Koppole, et al.ArtigoAcesso aberto
2019Enhancing the dielectric relaxor behavior and energy storage properties of 0.6Ba(Zr0.2Ti0.8)O3–0.4(Ba0.7Ca0.3)TiO3 ceramics through the incorporation of paraelectric SrTiO3Jayakrishnan, A. R.; Alex, Kevin V.; Kamakshi, K., et al.ArtigoAcesso restrito UMinho
Ago-2020Exploring the use of choline acetate on the sustainable development of α‑chitin-based spongesGomes, J. M.; Silva, Simone S.; Reis, R. L.ArtigoAcesso restrito UMinho
2015Ferroelectric phase transitions studies in 0.5Ba(Zr0.2Ti0.8) O3-0.5(Ba0.7Ca0.3)TiO3 ceramicsSilva, J. P. B.; Queirós, E. C.; Tavares, P. B., et al.ArtigoAcesso restrito UMinho
Jan-2016Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin filmsSilva, J. P. B.; Kamakshi, Koppole; Sekhar, K. C., et al.ArtigoAcesso restrito UMinho
2013Ferroelectric properties of pulsed laser deposited PZT (92/8) thin filmsSilva, J. P. B.; Rodrigues, S. A. S.; Sekhar, K. C., et al.ArtigoAcesso restrito UMinho
2022Ferroelectric properties of ZrO2 films deposited on ITO-coated glassSilva, José Pedro Basto; Sekhar, K. C.; Negrea, R. F., et al.ArtigoAcesso restrito UMinho
2012Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin filmsSilva, José Pedro Basto; Sekhar, Koppole C.; Rodrigues, Sofia A. S., et al.ArtigoAcesso restrito UMinho
2018Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O-3-0.5( Ba0.7Ca0.3)TiO3 thin filmsSilva, J. P. B.; Kamakshi, K.; Negrea, R. F., et al.ArtigoAcesso restrito UMinho
2023Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin filmsSilva, José Pedro Basto; Istrate, Marian C.; Hellenbrand, Markus, et al.ArtigoAcesso aberto
2001FIR absorption in CdSe quantum dot ensemblesVasilevskiy, Mikhail; Rolo, Anabela G.; Artemyev, Mikhail V., et al.ArtigoAcesso aberto
Mostrar 21-40 de um total de 122 resultados. < anterior   próximo >